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Typical Performance Characteristics
Figure 1. On-Region Characteristics
100
V GS = 15.0 V
Figure 2. Transfer Characteristics
1000
150 C
25 C
-55 C
10
1
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
100
10
o
o
o
2. T C = 25 C
0.1
0.1
*Notes:
1. 250 μ s Pulse Test
o
1 10
100
1
0.3
2
*Notes:
1. V DS = 20V
2. 250 μ s Pulse Test
3 4 5 6
7
150 C
25 C
V DS , Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.3
0.2
V GS = 10V
0.1
V GS = 20V
V GS , Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
300
100
o
o
10
*Notes:
1. V GS = 0V
*Notes: T C = 25 C
0
0
20
40 60 80 100
I D , Drain Current [A]
o
1
0.4
2. 250 μ s Pulse Test
0.6 0.8 1.0
V SD , Body Diode Forward Voltage [V]
1.2
Figure 5. Capacitance Characteristics
100000
Figure 6. Gate Charge Characteristics
10
V DS = 120V
10000
1000
C iss
8
6
V DS = 300V
V DS = 480V
C oss
100
*Notes:
1. V GS = 0V
4
10
2. f = 1MHz
Ciss = Cgs + Cgd ( Cds = shorted )
Coss = Cds + Cgd
C rss
2
1
0.1
Crss = Cgd
1 10 100
V DS , Drain-Source Voltage [V]
600
0
0
*Notes: I D = 18A
25 50 75
Q g , Total Gate Charge [nC]
100
?2010 Fairchild Semiconductor Corporation
FCP36N60N / FCPF36N60NT Rev. C2
3
www.fairchildsemi.com
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